<$.rnl-condu<2toi ^p , ijna, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 uhf power ldmos transistor BLF861A features ? high power gain ? easy power control ? excellent ruggedness ? designed to withstand abrupt load mismatch errors ? source on underside eliminates dc isolators; reducing common mode inductance ? designed for broadband operation (uhf band) ? internal input and output matching for high gain and optimum broadband operation. applications ? communication transmitter applications in the uhf frequency range. description silicon n-channel enhancement mode lateral d-mos push-pull transistor in a sot540a package with ceramic cap. the common source is connected to the mounting flange. pinning - sot540a pin 1 2 3 4 5 description drain 1 drain 2 gate 1 gate 2 source connected to flange 3 4 top view fig.1 simplified outline. quick reference data rf performance at th = 25 c in a common source 860 mhz test circuit. mode of operation cw, class-ab pal bg (tv); class-ab f (mhz) 860 860 (ch 69) vds (v) 32 32 pl (w) 150 >150 typ. 170 (peak sync) gp (db) >13.5 typ. 14.5 >14 tld {%) >50 >40 agp (db) <1 note 1 note 1. sync compression: input sync > 33%; output sync 27%. nj .semi-coiidudors reserves rhe right (o change test conditions, parameter limits and packuge dimensions without notice information tumished by nj semi-conductors"' believed to he hoih accurate and reliable ill the lime of going to press. however semi-c uiijuuors .bsumcs no responsibility lor ;my errors nr uumsiiins jiscuvcrej in its use nj seim-ctutchmurs ei i. iiiti1 mop; in vl'iil\m ih has heels ire uirreni before plncina
limiting values in accordance with the absolute maximum rating system (iec 60134). symbol vds vgs id plot tstg t| parameter drain-source voltage gate-source voltage drain current (dc) total power dissipation storage temperature junction temperature conditions tmb<25c min. - - - - -65 - max. 65 15 18 318 +150 200 unit v v a w c c uhf power ldmos transistor BLF861A thermal characteristics symbol rth i-mb rth mb-h parameter thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink conditions tmb = 25c;p,ot = 318w value 0.55 0.2 unit k/w k/w characteristics tj = 25 c; per section; unless otherwise specified. symbol v(br)dss vqsth idss bsx igss 9fs rdson cjss cqss cres parameter drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance conditions vqs = 0; id = 1.5ma vds = 10v; id = 150ma vqs = 0; vds = 32 v vgs = vgsth + 9v;vds = 10v vgs = +15v;vds = 0 vds = 10v; id = 4 a vgs = vgs,h + 9v;ld = 4a vqs = 0; vds = 32 v; f = 1 mhz <1> vgs = 0; vds = 32 v; f = 1 mhz <1> vqs = 0; vds = 32 v; f = 1 mhz <1> min. 65 4 - 18 - - - - - - typ. - - - - - 4 160 82 40 6 max. - 5.5 2.2 - 25 - - - - - unit v v ha a na s mo pf pf pf uhf power ldmos transistor BLF861A application information rf performance in a common source 860 mhz test circuit. th = 25 c; rth mb-h = 0.15 k/w; unless otherwise specified. mode of operation cw; class-ab 2-tone; class-ab pal bg (tv); class-ab f (mhz) 860 f! = 860 it = 860.1 860 (ch 69) vds (v) 32 32 32 idq (a) 1 1 1 pl (w) 150 150 (pep) >150 typ. 170 (peak sync) gp (db) >13.5 typ. 14.5 >14 >14 ho (%) >50 >40 >40 d,m (dbc) <-25 agp (db) <1 note 1
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